| PART |
Description |
Maker |
| CMOSH-4E10 |
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE
|
Central Semiconductor Corp
|
| CMPT5551E |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CMUT5551E |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CMPT5087E CMPT5088E CMPT5087E10 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
|
Central Semiconductor Corp
|
| CMST6427E MST6427E |
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON NPN DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CMOSH-4E |
SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE
SMD Schottky Diode Single: High Current
|
Central Semiconductor Corp.
|
| CMPD2838E CMPD2836E |
SMD Switching Diode Dual: Common Anode
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| CMNT3904E CMNT3904E10 CMNT3906E CMNT3904E-15 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTOR
200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR 1 X 0.80 MM, 0.50 MM HEIGHT, ULTRA SMALL, FEMTOMINI-5
|
Central Semiconductor Corp
Central Semiconductor, Corp.
Central Semiconductor C...
|
| LSP1004 LSP1011 LSP1000 LSP1012 LSP1002 LSP1004-35 |
35 V, SILICON, PIN DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES 增强性能表面贴装绕流封装器件
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES
|
MICROSEMI CORP-LOWELL
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 749010013 744761068A |
All 16 terminals must lie on a plane within 004 of surface A after lead tinning
specification for release
specification for release
|
Wurth Elektronik GmbH & Co. KG, Germany.
Wurth Elektronik GmbH &...
|
